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Same model may have multiple batches, images only for reference.
RN2906,LF Toshiba Semiconductor and Storage
Same model may have multiple batches, images only for reference.

RN2906,LF

Part No RN2906,LF
Manufacturer Toshiba Semiconductor and Storage
Catalog Transistors (BJT) - Arrays, Pre - Biased
Description TRANS 2PNP PREBIAS 0.2W US6
Datasheet
RN2906,LF Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Toshiba Semiconductor and Storage
Packaging Reel - TR
Status Active
Transistor Polarity 2 PNP - Pre-Biased (Dual)
Maximum Current Collector 100mA
VCEO Maximum Collector-Emitter Breakdown Voltage 50V
Resistor - Base (R1) (Ohms) 4.7k
Resistor - Emitter Base (R2) (Ohms) 47k
Typical Gain (hFE) (Min) 80 @ 10mA, 5V
Max Vce (sat) 300mV @ 250μA, 5mA
Collector Cut-off Current(Max) 500nA
Frequency - Transition 200MHz
Maximum Power Dissipation 200mW
Mounting SMD (SMT)
Case / Package US6
Win Source Part Number 1092502-RN2906,LF
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian RN2906,LF CAD Model

Description

The RN2906,LF is a US6 reference case transistor that is designed to operate in a balanced supply and demand status.

  • Packaging: reel-TR
  • Mounting: SMD (SMT)
  • Maximum Current Collector: 100mA
  • VCEO Maximum Collector-Emitter Breakdown Voltage: 50V
  • Collector Cut-Off Current(max): 500nA
  • Typical Gain (hFE) (Min): 80 @ 10mA, 5V
  • Maximum Power Dissipation: 200mW

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