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Same model may have multiple batches, images only for reference.
RN4910FE(TE85L,F)
Same model may have multiple batches, images only for reference.

RN4910FE(TE85L,F)

Part No RN4910FE(TE85L,F)
Manufacturer Toshiba Semiconductor and Storage
Catalog RF Transistors (BJT)
Description Trans Npn/pnp Prebias 0.1W ES6
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Collector Emitter Breakdown Voltage 50 V
Collector Emitter Voltage (VCEO) 300 mV
Max Breakdown Voltage 50 V
Max Collector Current 100 mA
Max Power Dissipation 100 mW
Mount Surface Mount
Packaging Cut Tape (CT)
RoHS Compliant
Transition Frequency 250 MHz
Win Source Part Number 978202-RN4910FE(TE85L,F)
Categories RF Transistors(BJT)
Manufacturer Toshiba Semiconductor and Storage
Popularity Low
Supply and Demand Status Shortage
Ultra Librarian 3D Model Ultra Librarian RN4910FE(TE85L,F) CAD Model

Description

The RN4910FE(TE85L,F) is an RF transistor BJT manufactured by Toshiba Semiconductor and Storage. It has a low popularity and is designed for surface mount.

  • RoHS Compliance: RoHS compliant
  • Maximum Power Dissipation: 100 mW
  • Maximum Breakdown Voltage: 50 V
  • Collector-Emitter Breakdown Voltage: 50 V
  • Collector-Emitter Voltage (VCEO): 300 mV
  • Maximum Collector Current: 100 mA
  • Transition Frequency: 250 MHz

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Pricing & Ordering

Quantity Unit Price Ext. Price
590+ $0.0982 $57.9380
1,430+ $0.0809 $115.6870
2,210+ $0.0785 $173.4850
3,035+ $0.0762 $231.2670
3,970+ $0.0728 $289.0160
5,265+ $0.0658 $346.4370
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 4,300 pieces
MOQ: 590 pcs
Order Increment : 1 pcs
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