The RN4911FE is a silicon epitaxial planar type transistor manufactured by Toshiba Semiconductor and Storage. It's primarily designed for use in inverter circuits and high-speed switching applications. This transistor offers a combination of high-speed switching performance and low saturation voltage, contributing to efficient circuit operation.

Applications

• Inverter circuits
• High-speed switching circuits
• DC-DC converters
• Power management circuits
• Load switching

Features

• Low saturation voltage (VCE(sat)): 0.15V (Typ.) @ IC = 500mA
• High-speed switching: trr = 50ns (Typ.)
• High collector current: IC = 2A
• Collector-emitter voltage: VCEO = 30V
• Package: SOT-23 (SMT)

Benefits

• Efficient Switching: The RN4911FE provides high-speed switching capabilities, reducing switching losses and improving overall circuit efficiency.
• Low Power Dissipation: With a low saturation voltage, the transistor minimizes power dissipation during conduction, contributing to energy savings.
• Compact Size: The SOT-23 package allows for space-saving designs in compact electronic devices.
• Versatile Application: Suitable for various switching and amplification applications due to its balanced performance characteristics.
• Reduced Heat Generation: Low saturation voltage and fast switching reduce heat generation within the device, improving reliability.

Technical Specifications

The RN4911FE has a collector-emitter voltage (VCEO) of 30V and a collector current (IC) of 2A. The saturation voltage (VCE(sat)) is typically 0.15V at a collector current of 500mA. The reverse recovery time (trr) is typically 50ns. The power dissipation (PD) is 200mW. The operating temperature range is -55°C to +150°C. The package is a SOT-23 surface mount package.