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RN4982,LF(CT

Part No RN4982,LF(CT
Manufacturer Toshiba Semiconductor and Storage
Catalog Transistors (BJT) - Arrays, Pre - Biased
Description TRANS NPN/PNP PREBIAS 0.2W US6
Datasheet
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer Toshiba Semiconductor and Storage
Packaging Reel - TR
Status Active
Transistor Polarity 1 NPN, 1 PNP - Pre-Biased (Dual)
Maximum Current Collector 100mA
VCEO Maximum Collector-Emitter Breakdown Voltage 50V
Resistor - Base (R1) (Ohms) 10k
Resistor - Emitter Base (R2) (Ohms) 10k
Typical Gain (hFE) (Min) 50 @ 10mA, 5V
Max Vce (sat) 300mV @ 250μA, 5mA
Collector Cut-off Current(Max) 100μA (ICBO)
Frequency - Transition 250MHz, 200MHz
Maximum Power Dissipation 200mW
Mounting SMD (SMT)
Case / Package US6
Win Source Part Number 1092521-RN4982,LF(CT
Popularity Medium
Supply and Demand Status Sufficient
Ultra Librarian 3D Model Ultra Librarian RN4982,LF(CT CAD Model

Description

The Toshiba Semiconductor and Storage RN4982,LF(CT) is a pre-biased transistor that is designed for use in a wide range of applications.

  • Manufacturer: Toshiba Semiconductor and Storage
  • Maximum Collector-Emitter Breakdown Voltage: 50V
  • Maximum Power Dissipation: 200mW
  • Case/Package: US6

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Pricing & Ordering

Quantity Unit Price Ext. Price
895+ $0.0561 $50.2095
1,905+ $0.0525 $100.0125
2,960+ $0.0507 $150.0720
4,250+ $0.0471 $200.1750
5,520+ $0.0453 $250.0560
6,900+ $0.0435 $300.1500
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 212,390 pieces
MOQ: 895 pcs
Order Increment : 1 pcs
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