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BSZ110N06NS3GATMA1

Part No BSZ110N06NS3GATMA1
Manufacturer Infineon Technologies
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 60V 20A 8TSDSON
Datasheet
Sample
Rohs State rohs
ECAD Module
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Category Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single FETs, MOSFETs
Mfr Infineon Technologies
Series OptiMOS™
Package Tape & Reel
Product Status Active
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 60 V
Current - Continuous Drain (Id) @ 25°C 20A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Max) @ Id, Vgs 11mOhm @ 20A, 10V
Vgs(th) (Max) @ Id 4V @ 23µA
Gate Charge (Qg) (Max) @ Vgs 33 nC @ 10 V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 2700 pF @ 30 V
Power Dissipation (Max) 2.1W (Ta), 50W (Tc)
Temperature Range - Operating -55°C ~ 150°C (TJ)
Mounting Type Surface Mount
Supplier Device Package PG-TSDSON-8
Package / Case 8-PowerVDFN
Base Product Number BSZ110
Standard Package 5,000 pcs
MSL Level 1 (Unlimited)
REACH Status REACH Unaffected
ECCN EAR99
HTSUS 8541.29.0095
Win Source Part Number 864795-BSZ110N06NS3GATMA1
Ultra Librarian 3D Model Ultra Librarian BSZ110N06NS3GATMA1 CAD Model

Description

The BSZ110N06NS3GATMA1 is an N-Channel MOSFET transistor from Infineon Technologies.

  • Type: N-Channel MOSFET
  • Series: OptiMOS™
  • Drain to Source Voltage (Vdss): 60V
  • Continuous Drain Current (Id) @ 25°C: 20A
  • On-Resistance (Rds On) @ Vgs=10V, Id=20A: 11mOhm
  • Gate Threshold Voltage (Vgs(th)) @ Id=23μA: 4V
  • Power Dissipation (Ta): 2.1W
  • Power Dissipation (Tc): 50W
  • Mounting Type: Surface Mount
  • Package: 8-PowerVDFN

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Pricing & Ordering

Quantity Unit Price Ext. Price
80+ $0.6455 $51.6400
170+ $0.6039 $102.6630
260+ $0.5831 $151.6060
370+ $0.5414 $200.3180
485+ $0.5206 $252.4910
605+ $0.4998 $302.3790
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 68,970 pieces
MOQ: 80 pcs
Order Increment : 1 pcs
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