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Same model may have multiple batches, images only for reference.
RN4982FE(T5L,F,T)
Same model may have multiple batches, images only for reference.

RN4982FE(T5L,F,T)

Part No RN4982FE(T5L,F,T)
Manufacturer Toshiba Semiconductor and Storage
Catalog RF Transistors (BJT)
Description Trans Npn/pnp Prebias 0.1W ES6
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Collector Emitter Breakdown Voltage 50 V
Collector Emitter Voltage (VCEO) 300 mV
Max Breakdown Voltage 50 V
Max Collector Current 100 mA
Max Power Dissipation 100 mW
Mount Surface Mount
RoHS Compliant
Transition Frequency 250 MHz
Win Source Part Number 974588-RN4982FE(T5L,F,T)
Categories RF Transistors(BJT)
Manufacturer Toshiba Semiconductor and Storage
Popularity Low
Supply and Demand Status Shortage
Ultra Librarian 3D Model Ultra Librarian RN4982FE(T5L,F,T) CAD Model

Description

The Toshiba Semiconductor and Storage RN4982FE(T5L,F,T) is an RF transistor (BJT) with a maximum power dissipation of 100mW and a maximum breakdown voltage of 50V.

  • Power Dissipation: 100mW
  • Breakdown Voltage: 50V
  • Type: Surface-Mount
  • Collector-Emitter Voltage (VCEO): 300mV
  • Transition Frequency: 250MHz
  • Supply and Demand Status: Shortage
  • Packaging: Digi-Reel
  • RoHS Compliant: Yes

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