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Same model may have multiple batches, images only for reference.
RN4982FE Toshiba Semiconductor and Storage
Same model may have multiple batches, images only for reference.

RN4982FE

Part No RN4982FE
Manufacturer Toshiba Semiconductor and Storage
Catalog Transistors (BJT) - Arrays, Pre - Biased
Description TRANS NPN/PNP PREBIAS 0.1W ES6
Datasheet
RN4982FE Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Toshiba Semiconductor and Storage
Packaging Reel - TR
Status Active
Transistor Polarity 1 NPN, 1 PNP - Pre-Biased (Dual)
Maximum Current Collector 100mA
VCEO Maximum Collector-Emitter Breakdown Voltage 50V
Resistor - Base (R1) (Ohms) 10k
Resistor - Emitter Base (R2) (Ohms) 10k
Typical Gain (hFE) (Min) 50 @ 10mA, 5V
Max Vce (sat) 300mV @ 250μA, 5mA
Collector Cut-off Current(Max) 100nA (ICBO)
Frequency - Transition 250MHz
Maximum Power Dissipation 100mW
Mounting SMD (SMT)
Case / Package ES6
Win Source Part Number 183838-RN4982FE
Popularity Medium
Supply and Demand Status Sufficient
Ultra Librarian 3D Model Ultra Librarian RN4982FE CAD Model

Description

The Toshiba Semiconductor and Storage RN4982FE is a pre-biased dual NPN and PNP transistor that comes in an ES6 package.

  • Maximum Collector Current: 100mA
  • Collector-Emitter Breakdown Voltage: 50V
  • Typical Gain: 50 @ 10mA and 5V
  • Popularity: Medium
  • Supply and Demand Status: Sufficient

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Quantity Unit Price Ext. Price
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160+ $0.7427 $118.8320
245+ $0.7196 $176.3020
335+ $0.6953 $232.9255
430+ $0.6722 $289.0460
575+ $0.6029 $346.6675
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