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RN4983FE,LF

Part No RN4983FE,LF
Manufacturer Toshiba Semiconductor and Storage
Catalog Transistors (BJT) - Arrays, Pre - Biased
Description TRANS NPN/PNP PREBIAS 0.1W ES6
Datasheet
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer Toshiba Semiconductor and Storage
Packaging Reel - TR
Status Active
Transistor Polarity 1 NPN, 1 PNP - Pre-Biased (Dual)
Maximum Current Collector 100mA
VCEO Maximum Collector-Emitter Breakdown Voltage 50V
Resistor - Base (R1) (Ohms) 22k
Resistor - Emitter Base (R2) (Ohms) 22k
Typical Gain (hFE) (Min) 70 @ 10mA, 5V
Max Vce (sat) 300mV @ 250μA, 5mA
Collector Cut-off Current(Max) 100nA (ICBO)
Frequency - Transition 250MHz
Maximum Power Dissipation 100mW
Mounting SMD (SMT)
Case / Package ES6
Win Source Part Number 096378-RN4983FE,LF
Popularity Medium
Supply and Demand Status Sufficient
Ultra Librarian 3D Model Ultra Librarian RN4983FE,LF CAD Model

Description

The Toshiba RN4983FE,LF is a high-performance dual pre-biased NPN and PNP transistor that is widely used in various electronic applications.

  • Transition Frequency: 250MHz
  • Maximum Collector-Emitter Breakdown Voltage: 50V
  • Maximum Power Dissipation: 100mW
  • Typical Gain: 70 @ 10mA and 5V
  • Package: ES6
  • ROHS Compliant: Yes

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Pricing & Ordering

Quantity Unit Price Ext. Price
65+ $0.9379 $60.9635
155+ $0.7692 $119.2260
235+ $0.7450 $175.0750
325+ $0.7207 $234.2275
415+ $0.6976 $289.5040
555+ $0.6249 $346.8195
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 152,300 pieces
MOQ: 65 pcs
Order Increment : 1 pcs
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