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Same model may have multiple batches, images only for reference.
RN4985(T5L,F,T)
Same model may have multiple batches, images only for reference.

RN4985(T5L,F,T)

Part No RN4985(T5L,F,T)
Manufacturer Toshiba Semiconductor and Storage
Catalog RF Transistors (BJT)
Description Trans Npn/pnp Prebias 0.2W US6
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Collector Emitter Breakdown Voltage 50 V
Collector Emitter Voltage (VCEO) 300 mV
Continuous Collector Current -100 mA
Element Configuration Dual
Max Breakdown Voltage 50 V
Max Collector Current 100 µA
Max Operating Temperature 150 °C
Max Power Dissipation 200 mW
Mount Surface Mount
Number of Pins 6
Packaging Cut Tape (CT)
Polarity NPN, PNP
Power Dissipation 200 mW
RoHS Compliant
Transition Frequency 200 MHz
Win Source Part Number 1145472-RN4985(T5L,F,T)
Categories RF Transistors(BJT)
Manufacturer Toshiba Semiconductor and Storage
Popularity Medium
Supply and Demand Status Limited
Ultra Librarian 3D Model Ultra Librarian RN4985(T5L,F,T) CAD Model

Description

The Toshiba Semiconductor and Storage RN4985(T5L,F,T) is a medium-popularity NPN, PNP RF transistor.

  • Max Power Dissipation: 200 mW
  • Max Breakdown Voltage: 50 V
  • Collector Emitter Breakdown Voltage: 50 V
  • Collector Emitter Voltage (VCEO): 300 mV
  • Packaging: Cut Tape (CT)
  • Number of Pins: 6
  • Manufacturer: Toshiba Semiconductor and Storage

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Pricing & Ordering

Quantity Unit Price Ext. Price
1,355+ $0.0427 $57.8585
3,230+ $0.0358 $115.6340
5,000+ $0.0347 $173.5000
6,900+ $0.0335 $231.1500
8,930+ $0.0323 $288.4390
12,000+ $0.0289 $346.8000
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Availability: 167,000 pieces
MOQ: 1355 pcs
Order Increment : 1 pcs
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