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Same model may have multiple batches, images only for reference.
RN4990FE,LF(CB Toshiba Semiconductor and Storage
Same model may have multiple batches, images only for reference.

RN4990FE,LF(CB

Part No RN4990FE,LF(CB
Manufacturer Toshiba Semiconductor and Storage
Catalog Transistors (BJT) - Arrays, Pre - Biased
Description TRANS NPN/PNP PREBIAS 0.1W ES6
Datasheet
RN4990FE,LF(CB Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Toshiba Semiconductor and Storage
Packaging Reel - TR
Status Active
Transistor Polarity 1 NPN, 1 PNP - Pre-Biased (Dual)
Maximum Current Collector 100mA
VCEO Maximum Collector-Emitter Breakdown Voltage 50V
Resistor - Base (R1) (Ohms) 4.7k
Typical Gain (hFE) (Min) 120 @ 1mA, 5V
Max Vce (sat) 300mV @ 250μA, 5mA
Collector Cut-off Current(Max) 100nA (ICBO)
Frequency - Transition 250MHz, 200MHz
Maximum Power Dissipation 100mW
Mounting SMD (SMT)
Case / Package ES6
Win Source Part Number 1092532-RN4990FE,LF(CB
Popularity Medium
Supply and Demand Status Sufficient
Ultra Librarian 3D Model Ultra Librarian RN4990FE,LF(CB CAD Model

Description

The RN4990FE,LF(CB is a dual pre-biased NPN and PNP transistor manufactured by Toshiba Semiconductor and Storage.

  • Mount: surface mount device
  • Case/Package: ES6
  • Maximum Current Collector: 100mA
  • VCEO Maximum Collector-Emitter Breakdown Voltage: 50V
  • Maximum Vce (sat): 300mV @ 250μA and 5mA
  • Collector Cut-off Current (Max): 100nA (ICBO)
  • Typical Gain (hFE) (Min): 120 @ 1mA and 5V
  • Benefits: high gain and low power consumption
  • Operating Temperature Range: -40°C to 125°C

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