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Same model may have multiple batches, images only for reference.
SSM3J117TU Toshiba Semiconductor and Storage
Same model may have multiple batches, images only for reference.

SSM3J117TU

Part No SSM3J117TU
Manufacturer Toshiba Semiconductor and Storage
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET P-CHANNEL 30V 2A 3SMD
Datasheet
SSM3J117TU Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Toshiba Semiconductor and Storage
Packaging Reel - TR
Status Active
Polarity P-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 30V
Continuous Drain Current at 25°C 2A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 4V, 10V
Gate-Source Threshold Voltage 2.6V @ 1mA
Max Input Capacitance 280pF @ 15V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 500mW (Ta)
Maximum Rds On at Id,Vgs 117 mOhm @ 1A, 10V
Temperature Range - Operating 150°C
Mounting SMD (SMT)
Case / Package UFM
Dimension 3-SMD, Flat Leads
Win Source Part Number 066085-SSM3J117TU
Popularity Medium
Supply and Demand Status Sufficient
Ultra Librarian 3D Model Ultra Librarian SSM3J117TU CAD Model

Description

The Toshiba Semiconductor and Storage 066085-SSM3J117TU is a P-Channel MOSFET that has a drain-source breakdown voltage of 30V and a maximum continuous drain current of 2A @ 25°C.

  • Drain-Source Breakdown Voltage: 30V
  • Maximum Continuous Drain Current: 2A @ 25°C
  • Maximum Rds On: 117 mOhm @ 1A, 10V
  • Gate-Source Threshold Voltage: 2.6V @ 1mA
  • Maximum Input Capacitance: 280pF @ 15V
  • Maximum Gate-Source Voltage: ±20V
  • Case/Package: UFM, 3-SMD flat leads
  • Mounting Type: SMD (SMT)
  • Popular Choice For: discrete semiconductor products
  • Power Dissipation: 500mW (Ta)
  • Operating Temperature Range: up to 150°C

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