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Same model may have multiple batches, images only for reference.
SSM3J118TU(TE85L) Real Image
Same model may have multiple batches, images only for reference.

SSM3J118TU(TE85L)

Part No SSM3J118TU(TE85L)
Manufacturer Toshiba Semiconductor and Storage
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET P-CH 30V 1.4A UFM
Datasheet
SSM3J118TU(TE85L) Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Toshiba Semiconductor and Storage
Packaging Reel - TR
Status Active
Polarity P-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 30V
Continuous Drain Current at 25°C 1.4A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 4V, 10V
Max Input Capacitance 137pF @ 15V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 500mW (Ta)
Maximum Rds On at Id,Vgs 240 mOhm @ 650mA, 10V
Temperature Range - Operating 150°C (TJ)
Mounting SMD (SMT)
Case / Package UFM
Dimension 3-SMD, Flat Leads
Win Source Part Number 1102286-SSM3J118TU(TE85L)
Popularity Medium
Supply and Demand Status Sufficient
Ultra Librarian 3D Model Ultra Librarian SSM3J118TU(TE85L) CAD Model

Description

The Toshiba Semiconductor and Storage SSM3J118TU(TE85L) is a P-Channel MOSFET that has a drain-source breakdown voltage of 30V and a continuous drain current of 1.4A @ 25°C.

  • Maximum Rds On: 240 mOhm @ Id, Vgs of 650mA, 10V
  • Applications: Power management, DC-DC converters, and battery management systems
  • Maximum Gate-Source Voltage: ±20V
  • Maximum Input Capacitance: 137pF @ 15V
  • Package Quantity: 3000
  • Supply and Demand Status: Sufficient

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Pricing & Ordering

Quantity Unit Price Ext. Price
110+ $0.5278 $58.0580
270+ $0.4331 $116.9370
415+ $0.4197 $174.1755
570+ $0.4061 $231.4770
740+ $0.3926 $290.5240
985+ $0.3520 $346.7200
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 53,500 pieces
MOQ: 110 pcs
Order Increment : 1 pcs
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