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TJ60S06M3L(T6L1,NQ

Part No TJ60S06M3L(T6L1,NQ
Manufacturer Toshiba Semiconductor and Storage
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET P-CH 60V 60A DPAK-3 / Trans MOSFET P-CH Si 60V 60A Automotive 3-Pin(2+Tab) DPAK+ T/R
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer Toshiba Semiconductor and Storage
Series U-MOSVI
Packaging Reel package
Channel Type Type P
Technology MOSFET
Drain Source Voltage 60V
Current - Continuous Drain (Id) @ 25°C 60A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 6V, 10V
Vgs(th) (Maximum) @ Id 3V @ 1mA
Gate Charge (Qg) (Maximum) @ Vgs 156nC @ 10V
Input Capacitance (Ciss) (Maximum) @ Vds 7760pF @ 10V
Vgs (Maximum) +10V, -20V
Power Dissipation (Maximum) 100W (Tc)
Rds On (Maximum) @ Id, Vgs 11.2 mOhm @ 30A, 10V
Operating Temperature Range 175°C (TJ)
Mounting SMD
Manufacturer Package DPAK+
Package TO-252-3, DPak (2 Leads + Tab), SC-63
Win Source Part Number 796810-TJ60S06M3L(T6L1,NQ
Popularity Medium
Supply and Demand Status Limited
Family Name TJ60S06M3L
Introduction Date August 09, 2011
ECCN EAR99
Country of Origin Japan
Estimated EOL Date 2029
Ultra Librarian 3D Model Ultra Librarian TJ60S06M3L(T6L1,NQ CAD Model

Description

The Toshiba Semiconductor and Storage TJ60S06M3L(T6L1,NQ) is a P-channel MOSFET transistor.

  • Maximum drain-source voltage: 60V
  • Continuous drain current: 60A @ 25°C
  • Low on-resistance: 11.2 mOhm @ 30A and 10V gate-source voltage
  • Gate charge: 156nC @ 10V gate-source voltage
  • Input capacitance: 7760pF @ 10V drain-source voltage
  • Package: TO-252-3, DPak (2 Leads + Tab), SC-63
  • Series: U-MOSVI
  • EOL date: 2029

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Pricing & Ordering

Quantity Unit Price Ext. Price
60+ $0.8910 $53.4600
140+ $0.7311 $102.3540
215+ $0.7083 $152.2845
295+ $0.6854 $202.1930
380+ $0.6626 $251.7880
510+ $0.5940 $302.9400
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 9,400 pieces
MOQ: 60 pcs
Order Increment : 1 pcs
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