The Toshiba Semiconductor and Storage SSM3J133TU,LF is a MOSFET technology device that has a polarity of P-Channel.

• Polarity: P-Channel
• Packaging: reel - TR
• Mounting: SMD
• Power Dissipation (max): 500mW (Ta)
• Drive Voltage (max Rds On, min Rds On): 1.5V, 4.5V
• Temperature Range: 150°C (TJ)
• Case: UFM case with 3-SMD, flat leads
• Drain-Source Breakdown Voltage: 20V
• Continuous Drain Current @ 25°C: 5.5A (Ta)
• Gate-Source Threshold Voltage: 1V @ 1mA
• Maximum Gate Charge: 12.8nC @ 4.5V
• Maximum Input Capacitance: 840pF @ 10V
• Maximum Gate-Source Voltage: ±8V
• Maximum Rds On @ Id, Vgs: 29.8 mOhm @ 3A, 4.5V
• Supply and Demand Status: balance