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Same model may have multiple batches, images only for reference.
SSM3J15CT,L3F
Same model may have multiple batches, images only for reference.

SSM3J15CT,L3F

Part No SSM3J15CT,L3F
Manufacturer Toshiba Semiconductor and Storage
Catalog Transistors - FETs, MOSFETs - RF
Description SMALL LOW RON PCH MOSFETS VDSS:-
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Category Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single FETs, MOSFETs
Mfr Toshiba Semiconductor and Storage
Package Tape & Reel
Product Status Active
FET Type P-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 30 V
Current - Continuous Drain (Id) @ 25°C 100mA (Ta)
Drive Voltage (Max Rds On, Min Rds On) 2.5V, 4V
Rds On (Max) @ Id, Vgs 12Ohm @ 10mA, 4V
Vgs(th) (Max) @ Id 1.7V @ 100µA
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 9.1 pF @ 3 V
Power Dissipation (Max) 100mW (Ta)
Temperature Range - Operating 150°C
Mounting Type Surface Mount
Supplier Device Package CST3
Package / Case SC-101, SOT-883
Standard Package 10,000 pcs
MSL Level 1 (Unlimited)
ECCN EAR99
HTSUS 8541.21.0095
Win Source Part Number 966492-SSM3J15CT,L3F
Ultra Librarian 3D Model Ultra Librarian SSM3J15CT,L3F CAD Model

Description

The 966492-SSM3J15CT,L3F is a P-Channel MOSFET transistor from Toshiba Semiconductor and Storage.

  • Package: surface mount SC-101, SOT-883 package
  • Drain to Source Voltage (Vdss): 30V
  • Continuous Drain Current (Id): 100mA @ 25°C
  • Maximum On-Resistance (Rds On): 12Ohm @ 10mA and 4V
  • Gate Charge (Qg): 9.1pF @ 3V
  • Maximum Allowed Gate-Source Voltage (Vgs): ±20V
  • Operating Temperature Range: -55°C to 150°C
  • Standard Package: 10,000 pcs on tape and reel

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Pricing & Ordering

Quantity Unit Price Ext. Price
935+ $0.0536 $50.1160
2,275+ $0.0440 $100.1000
3,525+ $0.0426 $150.1650
4,855+ $0.0412 $200.0260
6,270+ $0.0399 $250.1730
8,380+ $0.0358 $300.0040
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Availability: 1,000 pieces
MOQ: 935 pcs
Order Increment : 1 pcs
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