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SSM3K15F(TE85L,F)

Part No SSM3K15F(TE85L,F)
Manufacturer Toshiba Semiconductor and Storage
Catalog FETs - Single
Sample
Rohs State rohs
ECAD Module
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Manufacturer Toshiba Semiconductor and Storage
Category Discrete Semiconductor Products
Family FETs - Single
Win Source Part Number 192972-SSM3K15F(TE85L,F)
Popularity Low
Supply and Demand Status Sufficient
Ultra Librarian 3D Model Ultra Librarian SSM3K15F(TE85L,F) CAD Model

Description

The SSM3K15F(TE85L,F) is a P-channel MOSFET from Toshiba Semiconductor and Storage, designed for high-speed switching applications. This device offers a low on-resistance and fast switching speed, contributing to efficient power management in various electronic circuits. The inclusion of the TE85L,F package signifies its optimized design for surface mounting and automated assembly processes, enhancing manufacturability and reducing production costs.

Applications

  • Load switches in portable devices
  • DC-DC converters
  • Power management circuits in smartphones and tablets
  • Switching applications in notebook PCs
  • Battery protection circuits

Features

  • P-Channel MOSFET
  • Low drain-source on-resistance (RDS(ON))
  • Fast switching speed
  • Surface mount package (TE85L,F)
  • Small footprint
  • Halogen-free

Benefits

  • Improved Efficiency: The low RDS(ON) minimizes power loss during conduction, leading to higher efficiency in power management applications.
  • Fast Switching: Enables rapid switching transitions, crucial for high-frequency DC-DC converters and load switching.
  • Compact Design: The small surface mount package allows for high-density circuit designs, ideal for portable electronics.
  • Simplified Assembly: The TE85L,F package is designed for automated surface mount assembly, reducing manufacturing time and costs.
  • Enhanced Thermal Performance: The package design facilitates efficient heat dissipation, improving the reliability of the device.

Technical Specifications: The SSM3K15F(TE85L,F) typically features a drain-source voltage (VDSS) rating that accommodates common battery voltages, a gate-source voltage (VGSS) rating suitable for logic-level control, and a continuous drain current (ID) rating optimized for portable device applications. The specific RDS(ON) value is a key parameter, usually in the milliohm range, and is specified at particular gate-source voltage levels. The TE85L,F package provides excellent thermal characteristics, contributing to the device's robust performance. It is RoHS compliant and halogen-free, aligning with environmental regulations.

This MOSFET is particularly well-suited for applications where space is limited and efficiency is paramount, such as in smartphones, tablets, and other portable devices. Its fast switching speed and low on-resistance make it an excellent choice for DC-DC conversion and load switching applications.

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Pricing & Ordering

Quantity Unit Price Ext. Price
530+ $0.1097 $58.1410
1,285+ $0.0901 $115.7785
1,975+ $0.0878 $173.4050
2,740+ $0.0843 $230.9820
3,525+ $0.0820 $289.0500
4,690+ $0.0739 $346.5910
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 37,500 pieces
MOQ: 530 pcs
Order Increment : 1 pcs
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