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Same model may have multiple batches, images only for reference.
SSM3K302T Real Image
Same model may have multiple batches, images only for reference.

SSM3K302T

Part No SSM3K302T
Manufacturer Toshiba Semiconductor and Storage
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 30V 3A TSM
Datasheet
SSM3K302T Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Toshiba Semiconductor and Storage
Packaging Reel - TR
Status Obsolete(EOL)
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 30V
Continuous Drain Current at 25°C 3A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 1.8V, 4V
Max Gate Charge 4.3nC @ 4V
Max Input Capacitance 270pF @ 10V
Maximum Gate-Source Voltage ±12V
Power Dissipation (Max) 700mW (Ta)
Maximum Rds On at Id,Vgs 71 mOhm @ 2A, 4V
Temperature Range - Operating 150°C (TJ)
Mounting SMD (SMT)
Case / Package TSM
Dimension TO-236-3, SC-59, SOT-23-3
Win Source Part Number 192997-SSM3K302T
Popularity Medium
Supply and Demand Status Sufficient
Ultra Librarian 3D Model Ultra Librarian SSM3K302T CAD Model

Description

The SSM3K302T is an N-channel MOSFET manufactured by Toshiba Semiconductor and Storage.

  • Status: obsolete
  • Popularity: medium
  • Supply and demand status: sufficient
  • Usage: designed for use in various applications such as switching regulators, DC-DC converters, and power management systems.
  • Drain-source breakdown voltage: 30V
  • Continuous drain current @ 25°C: 3A (Ta)
  • Maximum Rds On @ Id,Vgs: 71 mOhm @ 2A, 4V
  • Maximum gate-source voltage: ±12V

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Pricing & Ordering

Quantity Unit Price Ext. Price
120+ $0.4897 $58.7640
290+ $0.4019 $116.5510
450+ $0.3892 $175.1400
615+ $0.3777 $232.2855
795+ $0.3650 $290.1750
1,065+ $0.3269 $348.1485
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