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Same model may have multiple batches, images only for reference.
SSM3K36FS Real Image
Same model may have multiple batches, images only for reference.

SSM3K36FS

Part No SSM3K36FS
Manufacturer Toshiba Semiconductor and Storage
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 20V 500MA SSM
Datasheet
SSM3K36FS Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Toshiba Semiconductor and Storage
Packaging Reel - TR
Status Active
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 20V
Continuous Drain Current at 25°C 500mA (Ta)
Drive Voltage (Max Rds On, Min Rds On) 1.5V, 5V
Gate-Source Threshold Voltage 1V @ 1mA
Max Gate Charge 1.23nC @ 4V
Max Input Capacitance 46pF @ 10V
Maximum Gate-Source Voltage ±10V
Power Dissipation (Max) 150mW (Ta)
Maximum Rds On at Id,Vgs 630 mOhm @ 200mA, 5V
Temperature Range - Operating 150°C (TJ)
Mounting SMD (SMT)
Case / Package SSM
Dimension SC-75, SOT-416
Win Source Part Number 193009-SSM3K36FS
Popularity Medium
Supply and Demand Status Sufficient
Ultra Librarian 3D Model Ultra Librarian SSM3K36FS CAD Model

Description

The Toshiba Semiconductor and Storage MOSFET is an N-channel polarity component with a maximum power dissipation of 150mW (Ta) and a drain-source breakdown voltage of 20V.

  • Maximum Continuous Drain Current: 500mA (Ta)
  • Gate-Source Threshold Voltage: 1V @ 1mA
  • Popularity: medium
  • Supply and Demand Status: sufficient

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Pricing & Ordering

Quantity Unit Price Ext. Price
415+ $0.1211 $50.2565
1,010+ $0.0994 $100.3940
1,560+ $0.0963 $150.2280
2,150+ $0.0932 $200.3800
2,775+ $0.0901 $250.0275
3,715+ $0.0808 $300.1720
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 3,704,650 pieces
MOQ: 415 pcs
Order Increment : 1 pcs
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