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SSM6J503NU,LF(T

Part No SSM6J503NU,LF(T
Manufacturer Toshiba Semiconductor and Storage
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET P CH 20V 6A 2-2AA1A
Datasheet
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer Toshiba Semiconductor and Storage
Packaging Reel - TR
Status Active
Polarity P-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 20V
Continuous Drain Current at 25°C 6A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 1.5V, 4.5V
Gate-Source Threshold Voltage 1V @ 1mA
Max Gate Charge 12.8nC @ 10V
Max Input Capacitance 840pF @ 10V
Maximum Gate-Source Voltage ±8V
Power Dissipation (Max) 1W (Ta)
Maximum Rds On at Id,Vgs 32.4 mOhm @ 3A, 4.5V
Temperature Range - Operating 150°C (TJ)
Mounting SMD (SMT)
Case / Package 6-UDFNB (2x2)
Dimension 6-WDFN Exposed Pad
Win Source Part Number 1102318-SSM6J503NU,LF(T
Popularity Medium
Supply and Demand Status Sufficient
Ultra Librarian 3D Model Ultra Librarian SSM6J503NU,LF(T CAD Model

Description

The SSM6J503NU,LF(T by Toshiba Semiconductor and Storage is a P-Channel MOSFET.

  • Status: Active
  • Supply and Demand: Sufficient
  • Package: 6-UDFNB (2x2) with an exposed pad
  • Maximum Power Dissipation: 1W (Ta)
  • Breakdown Voltage: 20V
  • Continuous Drain Current: 6A (Ta) @ 25°C
  • Gate-Source Threshold Voltage: 1V @ 1mA
  • Maximum Gate-Source Voltage: ±8V
  • Maximum Rds On: 32.4 mOhm @ 3A, 4.5V
  • Temperature Range: 150°C (TJ)
  • Mounting Technology: SMD (SMT)

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Pricing & Ordering

Quantity Unit Price Ext. Price
60+ $1.0383 $62.2980
120+ $0.9714 $116.5680
185+ $0.9379 $173.5115
270+ $0.8709 $235.1430
345+ $0.8374 $288.9030
435+ $0.8039 $349.6965
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 85,300 pieces
MOQ: 45 pcs
Order Increment : 1 pcs
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