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SSM6J503NU,LF

Part No SSM6J503NU,LF
Manufacturer Toshiba Semiconductor and Storage
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET P CH 20V 6A 2-2AA1A
Datasheet
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer Toshiba Semiconductor and Storage
Packaging Reel - TR
Status Active
Polarity P-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 20V
Continuous Drain Current at 25°C 6A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 1.5V, 4.5V
Gate-Source Threshold Voltage 1V @ 1mA
Max Gate Charge 12.8nC @ 10V
Max Input Capacitance 840pF @ 10V
Maximum Gate-Source Voltage ±8V
Power Dissipation (Max) 1W (Ta)
Maximum Rds On at Id,Vgs 32.4 mOhm @ 3A, 4.5V
Temperature Range - Operating 150°C (TJ)
Mounting SMD (SMT)
Case / Package 6-UDFNB (2x2)
Dimension 6-WDFN Exposed Pad
Win Source Part Number 098327-SSM6J503NU,LF
Popularity Medium
Supply and Demand Status Sufficient
Ultra Librarian 3D Model Ultra Librarian SSM6J503NU,LF CAD Model

Description

The Toshiba Semiconductor and Storage SSM6J503NU,LF is a P-channel MOSFET designed for use in various applications such as power management, load switching, and battery protection.

  • Maximum Voltage Rating: 20V
  • Maximum Current Rating: 6A
  • On-State Resistance: low on-state resistance of 32.4mOhms
  • Gate Threshold Voltage: low gate threshold voltage of 1V
  • Package: small 6-UDFNB (2x2) package
  • Thermal Performance: excellent
  • High Voltage Isolation: yes
  • RoHS Compliant: yes
  • Packaging: available in tape and reel packaging

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Pricing & Ordering

Quantity Unit Price Ext. Price
60+ $1.0383 $62.2980
120+ $0.9714 $116.5680
185+ $0.9379 $173.5115
270+ $0.8709 $235.1430
345+ $0.8374 $288.9030
435+ $0.8039 $349.6965
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 85,400 pieces
MOQ: 45 pcs
Order Increment : 1 pcs
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Shipped from HK warehouse
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