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SSM6K513NU,LF

Part No SSM6K513NU,LF
Manufacturer Toshiba Semiconductor and Storage
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET NCH 30V 15A UDFNB
Datasheet
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer Toshiba Semiconductor and Storage
Packaging Reel - TR
Status Active
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 30V
Continuous Drain Current at 25°C 15A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Gate-Source Threshold Voltage 2.1V @ 100μA
Max Gate Charge 7.5nC @ 4.5V
Max Input Capacitance 1130pF @ 15V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 1.25W (Ta)
Maximum Rds On at Id,Vgs 8.9 mOhm @ 4A, 10V
Temperature Range - Operating 150°C (TA)
Mounting SMD (SMT)
Case / Package 6-UDFNB (2x2)
Dimension 6-WDFN Exposed Pad
Win Source Part Number 1102320-SSM6K513NU,LF
Is this a common-used part? Yes
Popularity High
Supply and Demand Status Sufficient
Family Name SSM6K513NU
ECCN EAR99
Country of Origin Thailand
Estimated EOL Date 2026
Ultra Librarian 3D Model Ultra Librarian SSM6K513NU,LF CAD Model

Description

The SSM6K513NU is an N-Channel MOSFET manufactured by Toshiba Semiconductor and Storage.

  • Drain-Source Breakdown Voltage: 30V
  • Continuous Drain Current: 15A @ 25°C
  • Gate-Source Threshold Voltage: 2.1V @ 100μA
  • Maximum Gate Charge: 7.5nC @ 4.5V
  • Maximum Input Capacitance: 1130pF @ 15V
  • Maximum Rds On @ Id, Vgs: 8.9 mOhm @ 4A, 10V

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Pricing & Ordering

Quantity Unit Price Ext. Price
205+ $0.2466 $50.5530
495+ $0.2023 $100.1385
770+ $0.1960 $150.9200
1,055+ $0.1897 $200.1335
1,365+ $0.1834 $250.3410
1,825+ $0.1644 $300.0300
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 8,280 pieces
MOQ: 205 pcs
Order Increment : 1 pcs
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