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SSM6L36TU,LF

Part No SSM6L36TU,LF
Manufacturer Toshiba Semiconductor and Storage
Catalog Transistors - FETs, MOSFETs - RF
Sample
Rohs State rohs
ECAD Module
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Category Discrete Semiconductor Products>Transistors - FETs, MOSFETs - Arrays
Mfr Toshiba Semiconductor and Storage
Package Tape & Reel
FET Type N and P-Channel
FET Feature Logic Level Gate, 1.5V Drive
Drain to Source Voltage (Vdss) 20V
Current - Continuous Drain (Id) @ 25°C 500mA (Ta), 330mA (Ta)
Rds On (Max) @ Id, Vgs 630mOhm @ 200mA, 5V, 1.31Ohm @ 100mA, 4.5V
Vgs(th) (Max) @ Id 1V @ 1mA
Gate Charge (Qg) (Max) @ Vgs 1.23nC @ 4V, 1.2nC @ 4V
Input Capacitance (Ciss) (Max) @ Vds 46pF @ 10V, 43pF @ 10V
Power - Max 500mW (Ta)
Temperature Range - Operating 150°C
Mounting SMD (SMT)
Package / Case 6-SMD, Flat Leads
Supplier Device Package UF6
Base Product Number SSM6L36
Other Names SSM6L36TULFCT,SSM6L36TULFDKR,SSM6L36TULFTR,SSM6L36TU,LF(B
Standard Package 3,000
MSL Level 1 (Unlimited)
ECCN EAR99
HTSUS 8541.21.0095
Win Source Part Number 1278539-SSM6L36TU,LF
Ultra Librarian 3D Model Ultra Librarian SSM6L36TU,LF CAD Model

Description

The SSM6L36TU,LF is a N and P-Channel MOSFET transistor array from Toshiba Semiconductor and Storage.

  • Drain to Source Voltage: 20V
  • Continuous Drain Current: 500mA (Ta) and 330mA (Ta)
  • Maximum On-Resistance: 630mOhm @ 200mA and 5V gate-source voltage
  • Gate-Source Voltage Threshold: 1V @ 1mA
  • Maximum Power Dissipation: 500mW @ 150°C
  • Gate Charge: 1.23nC @ 4V
  • Input Capacitance: 46pF @ 10V
  • Operating Temperature Range: 150°C

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Pricing & Ordering

Quantity Unit Price Ext. Price
440+ $0.1149 $50.5560
1,065+ $0.0943 $100.4295
1,645+ $0.0914 $150.3530
2,265+ $0.0884 $200.2260
2,925+ $0.0855 $250.0875
3,920+ $0.0766 $300.2720
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 1,523 pieces
MOQ: 440 pcs
Order Increment : 1 pcs
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