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Same model may have multiple batches, images only for reference.
2SC2235-Y(T6CANOFM Real Image
Same model may have multiple batches, images only for reference.

2SC2235-Y(T6CANOFM

Part No 2SC2235-Y(T6CANOFM
Manufacturer Toshiba Semiconductor and Storage
Catalog Transistors (BJT) - Single
Description TRANS NPN 800MA 120V TO226-3
Datasheet
2SC2235-Y(T6CANOFM Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Toshiba Semiconductor and Storage
Packaging Bulk
Transistor Polarity NPN
Maximum Current Collector 800mA
VCEO Maximum Collector-Emitter Breakdown Voltage 120V
Max Vce (sat) 1V @ 50mA, 500mA
Collector Cut-off Current(Max) 100nA (ICBO)
Typical Gain (hFE) (Min) 80 @ 100mA, 5V
Maximum Power Dissipation 900mW
Frequency - Transition 120MHz
Temperature Range - Operating 150°C (TJ)
Mounting Through Hole
Case / Package TO-92MOD
Win Source Part Number 1004345-2SC2235-Y(T6CANOFM
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian 2SC2235-Y(T6CANOFM CAD Model

Description

The Toshiba Semiconductor and Storage 2SC2235-Y(T6CANOFM) is a medium-popularity NPN transistor.

  • Frequency Transition: 120MHz
  • Maximum Collector-Emitter Breakdown Voltage: 120V
  • Maximum Current Collector: 800mA
  • Collector Cut-Off Current (Max): 100nA (ICBO)
  • Typical Gain (hFE) (Min) @ 100mA, 5V: 80 @ 100mA, 5V
  • Maximum Power Dissipation: 900mW
  • Case/Package: TO-92MOD
  • Mounting Type: Through Hole

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