The DTA123JE is a pre-biased bipolar transistor, designed for use in discrete semiconductor products. It is a surface mount device with a tape and reel package of 3000 pcs. The DTA123JE is a PNP transistor with a built-in diode. It has a maximum power rating of 150mW and a collector-emitter breakdown voltage of 50V. The maximum collector current is 100mA, allowing for various applications. With a Vce saturation of 300mV @ 250µA and 5mA, it ensures efficient operation. The DTA123JE has a low collector cutoff current of 500nA, minimizing power loss. It has a DC current gain of 80 @ 10mA and 5V, providing reliable amplification. With a transition frequency of 250MHz, it is suitable for high-frequency applications. This transistor is commonly used in amplifiers, oscillators, and other electronic circuits that require pre-biased transistors.