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SSM6P16FE(TE85L,F)

Part No SSM6P16FE(TE85L,F)
Manufacturer Toshiba Semiconductor and Storage
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET P-CH 20V 0.1A ES6
Datasheet
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer Toshiba Semiconductor and Storage
Packaging Cut Reel
Polarity P-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 20V
Continuous Drain Current at 25°C 100mA (Ta)
Drive Voltage (Max Rds On, Min Rds On) 1.5V, 4V
Max Input Capacitance 11pF @ 3V
Maximum Gate-Source Voltage ±10V
Power Dissipation (Max) 150mW (Ta)
Maximum Rds On at Id,Vgs 8 Ohm @ 10mA, 4V
Temperature Range - Operating 150°C (TJ)
Mounting SMD (SMT)
Case / Package ES6
Dimension SOT-563, SOT-666
Win Source Part Number 030891-SSM6P16FE(TE85L,F)
Popularity Medium
Supply and Demand Status Sufficient
Ultra Librarian 3D Model Ultra Librarian SSM6P16FE(TE85L,F) CAD Model

Description

The Toshiba Semiconductor and Storage MOSFET IC is a high-performance P-channel polarity IC that is designed to provide a power dissipation of 150mW.

  • Drive Voltage: 1.5V and 4V
  • Maximum Rds On at Id,Vgs: 8 Ohm @ 10mA, 4V
  • Maximum Gate-Source Voltage: ±10V
  • Maximum Input Capacitance: 11pF @ 3V
  • Case/Package: ES6
  • Popularity: Medium
  • Supply and Demand Status: Sufficient
  • Authenticity: Not a fake product.

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Pricing & Ordering

Quantity Unit Price Ext. Price
735+ $0.0681 $50.0535
1,790+ $0.0559 $100.0610
2,770+ $0.0542 $150.1340
3,820+ $0.0524 $200.1680
4,935+ $0.0507 $250.2045
6,610+ $0.0454 $300.0940
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 15,170 pieces
MOQ: 735 pcs
Order Increment : 1 pcs
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