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Same model may have multiple batches, images only for reference.
SSM6P35FE(TE85L,F) Toshiba Semiconductor and Storage
Same model may have multiple batches, images only for reference.

SSM6P35FE(TE85L,F)

Part No SSM6P35FE(TE85L,F)
Manufacturer Toshiba Semiconductor and Storage
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET 2P-CH 20V 0.1A ES6
Datasheet
SSM6P35FE(TE85L,F) Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Toshiba Semiconductor and Storage
Packaging Reel - TR
Status Active
FET Type 2 P-Channel (Dual)
FET Feature Logic Level Gate
Drain-Source Breakdown Voltage 20V
Continuous Drain Current at 25°C 100mA
Maximum Rds On at Id,Vgs 8 Ohm @ 50mA, 4V
Gate-Source Threshold Voltage 1V @ 1mA
Max Input Capacitance 12.2pF @ 3V
Maximum Power Dissipation 150mW
Temperature Range - Operating 150°C (TJ)
Mounting SMD (SMT)
Case / Package ES6 (1.6x1.6)
Win Source Part Number 1102329-SSM6P35FE(TE85L,F)
Popularity Medium
Supply and Demand Status Sufficient
Ultra Librarian 3D Model Ultra Librarian SSM6P35FE(TE85L,F) CAD Model

Description

The 430207 is a dual P-channel 2 FET that features a logic level gate manufactured by Toshiba Semiconductor and Storage.

  • Power Dissipation: 150mW
  • Drain-Source Breakdown Voltage: 20V
  • Continuous Drain Current: 100mA @ 25°C
  • Gate-Source Threshold Voltage: 1V @ 1mA
  • Maximum Input Capacitance: 12.2pF @ 3V
  • Maximum Rds On @ Id,Vgs: 8 Ohm @ 50mA, 4V
  • Operating Temperature: Up to 150°C (TJ)

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Pricing & Ordering

Quantity Unit Price Ext. Price
13+ $4.7944 $62.3272
30+ $3.9339 $118.0170
46+ $3.8103 $175.2738
63+ $3.6879 $232.3377
81+ $3.5655 $288.8055
109+ $3.1959 $348.3531
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 49,900 pieces
MOQ: 13 pcs
Order Increment : 1 pcs
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