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Same model may have multiple batches, images only for reference.
SSM6P54TU,LF Toshiba Semiconductor and Storage
Same model may have multiple batches, images only for reference.

SSM6P54TU,LF

Part No SSM6P54TU,LF
Manufacturer Toshiba Semiconductor and Storage
Catalog Transistors - FETs, MOSFETs - RF
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Category Discrete Semiconductor Products>Transistors - FETs, MOSFETs - Arrays
Mfr Toshiba Semiconductor and Storage
Package Tape & Reel
FET Type 2 P-Channel (Dual)
FET Feature Logic Level Gate, 1.5V Drive
Drain to Source Voltage (Vdss) 20V
Current - Continuous Drain (Id) @ 25°C 1.2A (Ta)
Rds On (Max) @ Id, Vgs 228mOhm @ 600mA, 2.5V
Vgs(th) (Max) @ Id 1V @ 1mA
Gate Charge (Qg) (Max) @ Vgs 7.7nC @ 4V
Input Capacitance (Ciss) (Max) @ Vds 331pF @ 10V
Power - Max 500mW (Ta)
Temperature Range - Operating 150°C
Mounting SMD (SMT)
Package / Case 6-SMD, Flat Leads
Supplier Device Package UF6
Base Product Number SSM6P54
Other Names SSM6P54TULFTR,SSM6P54TULFDKR,SSM6P54TULFCT,SSM6P54TU,LF(B
Standard Package 3,000
RoHS Status RoHS non-compliant
MSL Level 1 (Unlimited)
ECCN EAR99
HTSUS 8541.21.0095
Win Source Part Number 1278541-SSM6P54TU,LF
Ultra Librarian 3D Model Ultra Librarian SSM6P54TU,LF CAD Model

Description

The SSM6P54TU,LF MOSFET is a 2 P-Channel (Dual) FET with a drain to source voltage of 20V and a continuous drain current of 1.2A (Ta).

  • Drain to Source Voltage: 20V
  • Continuous Drain Current: 1.2A (Ta)
  • Rds On (Max) @ Id, Vgs: 228mOhm @ 600mA, 2.5V
  • Vgs(th) (Max) @ Id: 1V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs: 7.7nC @ 4V
  • Input Capacitance (Ciss) (Max) @ Vds: 331pF @ 10V

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