The TAH8N401K is a power MOSFET from Toshiba Semiconductor and Storage. It is designed for use in power switching applications requiring high voltage and moderate current handling capabilities. Typical applications include power supplies, motor drives, and lighting controls.

Applications

• Power supplies (SMPS)
• Motor control circuits
• LED lighting systems
• Inverters
• DC-DC converters

Features

• High breakdown voltage (V_DSS): 400V rating allows for use in high voltage applications.
• Low on-resistance (R_DS(on)): Minimizes conduction losses and improves efficiency.
• Fast switching speed: Enables efficient operation in high-frequency applications.
• Avalanche capability: Provides robustness against voltage transients.
• Environmentally friendly package: RoHS compliant and lead-free.

Benefits

• High efficiency: Low on-resistance reduces power dissipation, improving overall system efficiency.
• Reliable operation: High breakdown voltage and avalanche capability ensure robust performance.
• Compact design: Surface-mount package allows for efficient use of board space.
• Reduced heat generation: Efficient operation minimizes heat sink requirements.
• Compliance with regulations: RoHS compliance ensures environmental friendliness.

Additional Details

The TAH8N401K features a drain-source voltage rating of 400V and a continuous drain current of 8A. It is an N-channel enhancement mode MOSFET. The gate threshold voltage is typically between 2V and 4V. The device's datasheet provides detailed information on its electrical characteristics, thermal performance, and package dimensions. This device is commonly used in applications requiring high voltage switching and good power efficiency. Precise specifications like gate charge and capacitances depend on the specific datasheet revision.