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TC58BVG0S3HTAI0 Real Image
Same model may have multiple batches, images only for reference.

TC58BVG0S3HTAI0

Part No TC58BVG0S3HTAI0
Manufacturer Toshiba Semiconductor and Storage
Catalog EEPROM
Description IC EEPROM 1GBIT 25NS 48TSOP
Datasheet
TC58BVG0S3HTAI0 Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Integrated Circuits (ICs)
Manufacturer Toshiba Semiconductor and Storage
Series Benand
Packaging Tray
Memory Type Non-Volatile
Memory Format EEPROM
Technology EEPROM - NAND
Memory Size 1Gb (128M x 8)
Write Cycle Time - Word, Page 25ns
Access Time 25ns
Memory Interface Parallel
Operating Supply Voltage 2.7 V ~ 3.6 V
Operating Temperature Range -40°C ~ 85°C (TA)
Mounting SMD
Package 48-TFSOP (0.724", 18.40mm Width)
Manufacturer Package 48-TSOP I
Win Source Part Number 796444-TC58BVG0S3HTAI0
Family Name TC58BVG0
ECCN 3A991.b.1.a
Estimated EOL Date 2024
Is this a common-used part? Yes
Popularity High
Supply and Demand Status Limited
Quantity per package 96
Ultra Librarian 3D Model Ultra Librarian TC58BVG0S3HTAI0 CAD Model

Description

The TC58BVG0S3HTAI0 is a 1Gb (128M x 8) EEPROM NAND memory device from Toshiba Semiconductor and Storage.

  • Memory Size: 1Gb (128M x 8)
  • Memory Type: EEPROM NAND
  • Access Time: 25ns
  • Voltage Range: 2.7V to 3.6V
  • Write Cycle Time: 25ns
  • Package: 48-TFSOP (0.724", 18.40mm Width)
  • REACH Compliant: Yes
  • ECCN: 3A991.b.1.a
  • Popularity: High
  • Supply and Demand Status: Limited
  • Estimated EOL Date: 2024
  • Quantity per Package: 96

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Quantity Unit Price Ext. Price
6+ $9.7792 $58.6752
14+ $8.0239 $112.3346
22+ $7.7731 $171.0082
30+ $7.5225 $225.6750
39+ $7.2717 $283.5963
52+ $6.5194 $339.0088
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