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TH58BVG2S3HTA00

Part No TH58BVG2S3HTA00
Manufacturer Toshiba Semiconductor and Storage
Catalog EEPROM
Description IC EEPROM 4GBIT 25NS 48TSOP
Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Integrated Circuits
Manufacturer Toshiba Semiconductor and Storage
Packaging Tray
Status Active
Memory Format EEPROM
Technology EEPROM - NAND
Memory Size 4Gb (512M x 8)
Access Time 25ns
Supply Voltage - Operating 2.7 V to 3.6 V
Temperature Range - Operating 0°C to 70°C (TA)
Mounting SMD (SMT)
Case / Package 48-TSOP I
Win Source Part Number 212809-TH58BVG2S3HTA00
Popularity Medium
Supply and Demand Status Limited
Ultra Librarian 3D Model Ultra Librarian TH58BVG2S3HTA00 CAD Model

Description

The Toshiba Semiconductor and Storage TH58BVG2S3HTA00 is a 4Gb (512M x 8) EEPROM-NAND memory IC that has a 25ns access time.

  • Features: High speed data transfer and low power consumption.
  • Package: 48-TSOP I package
  • Supply Voltage: 2.7 V to 3.6 V
  • Supply and Demand Status: Limited

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Pricing & Ordering

Quantity Unit Price Ext. Price
10+ $6.2647 $62.6470
23+ $5.1398 $118.2154
35+ $4.9792 $174.2720
48+ $4.8187 $231.2976
62+ $4.6581 $288.8022
83+ $4.1765 $346.6495
!
Prices are subject to market and will be confirmed after the order is placed.
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 6,000 pieces
MOQ: 10 pcs
Order Increment : 1 pcs
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Shipping Information

Shipped from HK warehouse
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