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Same model may have multiple batches, images only for reference.
TK100E08N1,S1X Real Image
Same model may have multiple batches, images only for reference.

TK100E08N1,S1X

Part No TK100E08N1,S1X
Manufacturer Toshiba Semiconductor and Storage
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 80V 100A TO220
Datasheet
TK100E08N1,S1X Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Toshiba Semiconductor and Storage
Packaging Tube/Rail
Status Active
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 80V
Continuous Drain Current at 25°C 100A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 10V
Gate-Source Threshold Voltage 4V @ 1mA
Max Gate Charge 130nC @ 10V
Max Input Capacitance 9000pF @ 40V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 255W (Tc)
Maximum Rds On at Id,Vgs 3.2 mOhm @ 50A, 10V
Temperature Range - Operating 150°C (TJ)
Mounting Through Hole
Case / Package TO-220
Dimension TO-220-3
Win Source Part Number 1050167-TK100E08N1,S1X
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian TK100E08N1,S1X CAD Model

Description

The Toshiba Semiconductor and Storage electronic component is a MOSFET with the Win Source Part Number 1050167-TK100E08N1,S1X.

  • Manufacturer: Toshiba Semiconductor and Storage
  • Type: MOSFET
  • Win Source Part Number: 1050167-TK100E08N1,S1X
  • Supply and Demand Status: Balanced
  • Maximum Power Dissipation: 255W (Tc)
  • Continuous Drain Current: 100A (Ta)

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Pricing & Ordering

Quantity Unit Price Ext. Price
55+ $0.9780 $53.7900
125+ $0.8024 $100.3000
195+ $0.7774 $151.5930
270+ $0.7523 $203.1210
345+ $0.7272 $250.8840
465+ $0.6520 $303.1800
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Availability: 107,550 pieces
MOQ: 55 pcs
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