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TK100S04N1L,LQ

Part No TK100S04N1L,LQ
Manufacturer Toshiba Semiconductor and Storage
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 40V 100A DPAK / Trans MOSFET N-CH Si 40V 100A Automotive 3-Pin(2+Tab) DPAK+ T/R
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Toshiba Semiconductor and Storage
Series U-MOSVIII-H
Packaging Reel package
Channel Type Type N
Technology MOSFET
Drain Source Voltage 40V
Current - Continuous Drain (Id) @ 25°C 100A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Vgs(th) (Maximum) @ Id 2.5V @ 500μA
Gate Charge (Qg) (Maximum) @ Vgs 76nC @ 10V
Input Capacitance (Ciss) (Maximum) @ Vds 5490pF @ 10V
Vgs (Maximum) ±20V
Power Dissipation (Maximum) 100W (Tc)
Rds On (Maximum) @ Id, Vgs 2.3 mOhm @ 50A, 10V
Operating Temperature Range 175°C (TJ)
Mounting SMD
Manufacturer Package DPAK+
Package TO-252-3, DPak (2 Leads + Tab), SC-63
Win Source Part Number 796821-TK100S04N1L,LQ
Popularity Medium
Supply and Demand Status Balance
Family Name TK100S04N1L
ECCN EAR99
Country of Origin Japan
Estimated EOL Date 2030
Ultra Librarian 3D Model Ultra Librarian TK100S04N1L,LQ CAD Model

Description

The Toshiba Semiconductor and Storage 796821-TK100S04N1L,LQ is a MOSFET with a channel type of N.

  • Maximum drain-source voltage: 40V
  • Continuous drain current: 100A @ 25°C
  • Package: TO-252-3, DPak (2 Leads + Tab), SC-63
  • Operating temperature range: 175°C (TJ)
  • Power dissipation: 100W (Tc)
  • Gate charge: 76nC @ 10V
  • Input capacitance: 5490pF @ 10V
  • EOL date: 2030

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Pricing & Ordering

Quantity Unit Price Ext. Price
40+ $1.6309 $65.2360
90+ $1.3386 $120.4740
135+ $1.2959 $174.9465
185+ $1.2543 $232.0455
240+ $1.2128 $291.0720
320+ $1.0869 $347.8080
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 8,000 pieces
MOQ: 40 pcs
Order Increment : 1 pcs
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