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TK110N65Z,S1F

Part No TK110N65Z,S1F
Manufacturer Toshiba Semiconductor and Storage
Catalog Transistors - FETs, MOSFETs - RF
Description POWER MOSFET TRANSISTOR TO-247(O
Sample
Rohs State rohs
ECAD Module
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Category Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single FETs, MOSFETs
Mfr Toshiba Semiconductor and Storage
Series DTMOSVI
Package Tube
Product Status Active
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 650 V
Current - Continuous Drain (Id) @ 25°C 24A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Max) @ Id, Vgs 110mOhm @ 12A, 10V
Vgs(th) (Max) @ Id 4V @ 1.02mA
Gate Charge (Qg) (Max) @ Vgs 40 nC @ 10 V
Vgs (Max) ±30V
Input Capacitance (Ciss) (Max) @ Vds 2250 pF @ 300 V
Power Dissipation (Max) 190W (Tc)
Temperature Range - Operating 150°C
Mounting Type Through Hole
Supplier Device Package TO-247
Package / Case TO-247-3
Standard Package 30 pcs
MSL Level 1 (Unlimited)
ECCN EAR99
HTSUS 8541.29.0095
Win Source Part Number 1201604-TK110N65Z,S1F
Ultra Librarian 3D Model Ultra Librarian TK110N65Z,S1F CAD Model

Description

The 1201604-TK110N65Z,S1F is a high-voltage N-channel MOSFET designed for various electronic applications and manufactured by Toshiba Semiconductor and Storage.

  • Series: DTMOSVI
  • Package: TO-247-3
  • Drain to Source Voltage (Vdss): 650 V
  • Continuous Drain Current (Id): 24A
  • Rds On (Max): 110mOhm @ 12A and 10V
  • Gate Charge (Qg): 40 nC @ 10V
  • Maximum Operating Temperature: 150°C
  • Commonly Used In: Power supplies, motor control, and other high-voltage applications

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Pricing & Ordering

Quantity Unit Price Ext. Price
7+ $8.7595 $61.3165
17+ $7.1876 $122.1892
25+ $6.9623 $174.0575
35+ $6.7383 $235.8405
45+ $6.5130 $293.0850
60+ $5.8397 $350.3820
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 582 pieces
In Stock: 291 pieces Factory Stock: 291 pieces
MOQ: 7 pcs
Order Increment : 1 pcs
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Shipped from HK warehouse
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