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Same model may have multiple batches, images only for reference.
TK11A65W,S5X Real Image
Same model may have multiple batches, images only for reference.

TK11A65W,S5X

Part No TK11A65W,S5X
Manufacturer Toshiba Semiconductor and Storage
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 650V 11.1A TO-220
Datasheet
TK11A65W,S5X Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Toshiba Semiconductor and Storage
Packaging Tube/Rail
Status Active
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 650V
Continuous Drain Current at 25°C 11.1A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 10V
Gate-Source Threshold Voltage 3.5V @ 450μA
Max Gate Charge 25nC @ 10V
Max Input Capacitance 890pF @ 300V
Maximum Gate-Source Voltage ±30V
Power Dissipation (Max) 35W (Tc)
Maximum Rds On at Id,Vgs 390 mOhm @ 5.5A, 10V
Temperature Range - Operating 150°C (TJ)
Mounting Through Hole
Case / Package TO-220SIS
Dimension TO-220-3 Full Pack, Isolated Tab
Win Source Part Number 1050201-TK11A65W,S5X
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian TK11A65W,S5X CAD Model

Description

The Toshiba Semiconductor and Storage TK11A65W,S5X is a MOSFET electronic component suitable for use in various discrete semiconductor products.

  • Channel Type: N-channel
  • Power Dissipation: 35W (Tc)
  • Maximum Gate-Source Voltage: ±30V
  • Maximum Rds On @ Id,Vgs: 390 mOhm @ 5.5A, 10V
  • Packaging: TO-220SIS
  • Drain-Source Breakdown Voltage: 650V
  • Supply and Demand Status: Balance

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Pricing & Ordering

Quantity Unit Price Ext. Price
16,670+ $0.0035 $58.3450
33,335+ $0.0035 $116.6725
50,000+ $0.0035 $175.0000
66,670+ $0.0035 $233.3450
83,335+ $0.0035 $291.6725
150,000+ $0.0023 $345.0000
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 150,030 pieces
MOQ: 16670 pcs
Order Increment : 1 pcs
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