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Same model may have multiple batches, images only for reference.
TK12A60WS4VX(M
Same model may have multiple batches, images only for reference.

TK12A60WS4VX(M

Part No TK12A60WS4VX(M
Manufacturer Toshiba Semiconductor and Storage
Catalog Transistors - FETs, MOSFETs - RF
Description Mosfet Single N-ch 600V 11.5A , 0.3 TO-220SIS
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Continuous Drain Current (ID) 11.5 A
Fall Time 5.5 ns
Gate to Source Voltage (Vgs) 30 V
Max Operating Temperature 150 °C
Min Operating Temperature -55 °C
Mount Through Hole
Radiation Hardening No
Rise Time 23 ns
RoHS Compliant
Turn-Off Delay Time 85 ns
Turn-On Delay Time 45 ns
Win Source Part Number 1121009-TK12A60WS4VX(M
Categories Transistors - FETs, MOSFETs - RF
Manufacturer Toshiba Semiconductor and Storage
Popularity Medium
Supply and Demand Status Limited
Ultra Librarian 3D Model Ultra Librarian TK12A60WS4VX(M CAD Model

Description

The TK12A60WS4VX(M is an RF MOSFET transistor from Toshiba Semiconductor and Storage.

  • Continuous Drain Current (ID): 11.5 A
  • Gate to Source Voltage (Vgs): 30 V
  • Turn-On Delay Time: 45 ns
  • Turn-Off Delay Time: 85 ns
  • Rise Time: 23 ns
  • Fall Time: 5.5 ns
  • Package Size: Through Hole
  • Radiation Hardening: No
  • Operating Temperature: -55 °C to 150 °C
  • Application: Transistor, FET, MOSFET

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