The TK14A65W5 is a high-voltage power MOSFET from Toshiba Semiconductor and Storage. This N-channel MOSFET is designed for switching power supplies and other high-voltage applications, offering a balance of low on-resistance and fast switching speed. Its robust design makes it suitable for demanding environments.

Applications

• Switching power supplies (SMPS)
• Power factor correction (PFC) circuits
• High-voltage DC-DC converters
• Lighting ballast circuits
• Motor control applications

Features

• Low on-resistance (RDS(on)): Minimizes conduction losses for improved efficiency.
• High voltage rating (VDS): 650V rating allows use in high voltage applications.
• Fast switching speed: Reduces switching losses and improves overall efficiency.
• Easy to use: Simple gate drive requirements.
• Robust design: Enhanced avalanche capability

Benefits

• Increased power efficiency: Lower RDS(on) reduces conduction losses, improving energy efficiency.
• Improved system reliability: High voltage rating and avalanche capability ensures robustness.
• Simplified design: Easy to drive and implement in various applications.
• Reduced heat generation: Lower on-resistance minimizes heat dissipation.
• High Power Density: Can handle significant power levels in a compact package

Additional Details

The TK14A65W5 features a drain-source voltage (VDS) rating of 650 V and a continuous drain current (ID) of 14 A. The on-resistance (RDS(on)) is typically 0.29 Ohms at VGS = 10 V. The gate threshold voltage (VGS(th)) is typically between 2 V and 4 V. It's offered in a TO-247 package, providing excellent thermal performance. Operating temperature ranges from -55°C to +150°C. This MOSFET is designed for high-frequency switching applications, offering low gate charge and output capacitance.