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TK15A60U(Q)

Part No TK15A60U(Q)
Manufacturer Toshiba Semiconductor and Storage
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 600V 15A TO-220SIS
Datasheet
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer Toshiba Semiconductor and Storage
Packaging Tube/Rail
Status Active
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 600V
Continuous Drain Current at 25°C 15A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 10V
Gate-Source Threshold Voltage 5V @ 1mA
Max Gate Charge 17nC @ 10V
Max Input Capacitance 950pF @ 10V
Maximum Gate-Source Voltage ±30V
Power Dissipation (Max) 40W (Tc)
Maximum Rds On at Id,Vgs 300 mOhm @ 7.5A, 10V
Temperature Range - Operating 150°C (TJ)
Mounting Through Hole
Case / Package TO-220SIS
Dimension TO-220-3 Full Pack
Win Source Part Number 212866-TK15A60U(Q)
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian TK15A60U(Q) CAD Model

Description

The Toshiba Semiconductor and Storage 212866-TK15A60U(Q) MOSFET is an N-Channel polarity electronic component that is categorized under Discrete Semiconductor Products.

  • Maximum Power Dissipation: 40W (Tc)
  • Drive Voltage: 10V
  • Case/Package: TO-220SIS
  • Dimension: TO-220-3 Full Pack
  • Drain-Source Breakdown Voltage: 600V
  • Continuous Drain Current: 15A (Ta)
  • Gate-Source Threshold Voltage: 5V @ 1mA
  • Maximum Gate Charge: 17nC @ 10V
  • Maximum Input Capacitance: 950pF @ 10V
  • Maximum Gate-Source Voltage: ±30V
  • Maximum Rds On @ Id, Vgs: 300 mOhm @ 7.5A, 10V
  • Popularity: medium popularity rating

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Pricing & Ordering

Quantity Unit Price Ext. Price
19+ $3.0746 $58.4174
46+ $2.5237 $116.0902
71+ $2.4440 $173.5240
98+ $2.3654 $231.8092
127+ $2.2869 $290.4363
170+ $2.0501 $348.5170
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 1,270 pieces
MOQ: 19 pcs
Order Increment : 1 pcs
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