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TK15J60U

Part No TK15J60U
Manufacturer Toshiba Semiconductor and Storage
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 600V 15A TO-3PN
Datasheet
Sample
Rohs State rohs
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Categories Discrete Semiconductor Products
Manufacturer Toshiba Semiconductor and Storage
Packaging Tube/Rail
Status Active
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 600V
Continuous Drain Current at 25°C 15A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 10V
Gate-Source Threshold Voltage 5V @ 1mA
Max Gate Charge 17nC @ 10V
Max Input Capacitance 950pF @ 10V
Maximum Gate-Source Voltage ±30V
Power Dissipation (Max) 170W (Tc)
Maximum Rds On at Id,Vgs 300 mOhm @ 7.5A, 10V
Temperature Range - Operating 150°C (TJ)
Mounting Through Hole
Case / Package TO-3P(N)
Dimension TO-3P-3, SC-65-3
Win Source Part Number 043099-TK15J60U
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian TK15J60U CAD Model

Description

This Toshiba Semiconductor and Storage product with the Win Source Part Number 043099-TK15J60U is a N-Channel MOSFET with a maximum drain-source breakdown voltage of 600V and a continuous drain current of 15A at 25°C.

  • Maximum Drain-Source Breakdown Voltage: 600V
  • Continuous Drain Current: 15A @ 25°C
  • Maximum Gate-Source Voltage: ±30V
  • Maximum Rds On: 300 mOhm @ 7.5A, 10V
  • Maximum Gate Charge: 17nC @ 10V
  • Maximum Input Capacitance: 950pF @ 10V

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Pricing & Ordering

Quantity Unit Price Ext. Price
45+ $1.3109 $58.9905
110+ $1.0765 $118.4150
170+ $1.0430 $177.3100
230+ $1.0095 $232.1850
300+ $0.9748 $292.4400
400+ $0.8743 $349.7200
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 6,730 pieces
MOQ: 45 pcs
Order Increment : 1 pcs
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Shipped from HK warehouse
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