The TK16E60W from Toshiba is a 600V N-channel power MOSFET designed for high-efficiency switching applications. It utilizes Toshiba's DTMOSIV (Deep Trench MOSFET) technology to achieve low on-resistance and fast switching speeds.

Applications:

• Switch-mode power supplies (SMPS)
• Power factor correction (PFC) circuits
• DC-DC converters
• Motor control
• Lighting ballasts

Features:

• Voltage rating: 600V
• On-resistance: RDS(on) = 0.29 Ω (typ.) at VGS = 10V
• Gate threshold voltage: VGS(th) = 3.0 V (typ.)
• Continuous drain current: ID = 16 A
• Avalanche energy: EAS = 291 mJ
• Fast switching speed

Benefits:

• Suitable for high-voltage applications, ensuring reliable operation.
• Reduces power losses and improves efficiency due to low on-resistance.
• Easy to drive with standard gate drive voltages.
• Handles significant current levels, enabling high-power designs.
• Provides robustness against voltage transients.
• Minimizes switching losses, enhancing overall system performance.

Additional Details:

The TK16E60W is available in a TO-247 package, providing excellent thermal performance. The MOSFET features a built-in diode for reverse recovery. The device is designed to withstand repetitive avalanche conditions. The operating temperature range is -55°C to +150°C. The low gate charge (Qg) contributes to its fast switching characteristics.