The TK17A65U(STA4,X,M) is a 650V, 17A N-channel power MOSFET from Toshiba Semiconductor and Storage. This device is designed for high-efficiency power switching applications requiring high voltage capabilities. The device incorporates Toshiba’s advanced process technology for low on-resistance and gate charge.

Applications

• Switching Mode Power Supplies (SMPS)
• Power Factor Correction (PFC) circuits
• Uninterruptible Power Supplies (UPS)
• DC-DC Converters
• High-Voltage Motor Control

Features

• High Drain-Source Breakdown Voltage: 650V V<sub>DSS
• Continuous Drain Current: 17A I<sub>D
• Low On-Resistance (R<sub>DS(on)): Reduces conduction losses and improves efficiency.
• Low Gate Charge (Q<sub>g): Minimizes switching losses for higher efficiency.
• High Avalanche Ruggedness: Ensures reliability and withstands voltage spikes.
• Gate Threshold Voltage (VGS(th)): 2.0 V to 4.0 V
• Operating Temperature Range: -55°C to 150°C

Benefits

• Improved Efficiency: Low on-resistance and gate charge minimize power losses.
• Reduced Heat Dissipation: Lower power losses result in less heat generation, simplifying thermal management.
• Enhanced Reliability: High avalanche ruggedness protects against voltage transients.
• Compact Design: Enables smaller and lighter power supply designs.
• Easy to Control: Simplified circuit design for ease of use.

Additional Details

The TK17A65U(STA4,X,M) is available in a through-hole package for easy mounting. This device is RoHS compliant and suitable for various applications in power electronics. Refer to the datasheet for comprehensive specifications, including detailed electrical characteristics, thermal performance, and package dimensions. The device offers fast switching speeds, essential for high-frequency power electronics applications.