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TK2Q60D

Part No TK2Q60D
Manufacturer Toshiba Semiconductor and Storage
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 600V 2A PW-MOLD
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer Toshiba Semiconductor and Storage
Packaging Bulk
Status Active
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 600V
Continuous Drain Current at 25°C 2A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 10V
Gate-Source Threshold Voltage 4.4V @ 1mA
Max Gate Charge 7nC @ 10V
Max Input Capacitance 280pF @ 25V
Maximum Gate-Source Voltage ±30V
Power Dissipation (Max) 60W (Tc)
Maximum Rds On at Id,Vgs 4.3 Ohm @ 1A, 10V
Temperature Range - Operating 150°C (TJ)
Mounting Through Hole
Case / Package PW-MOLD2
Dimension TO-251-3 Stub Leads, IPak
Win Source Part Number 212875-TK2Q60D
Popularity Medium
Supply and Demand Status Limited
Ultra Librarian 3D Model Ultra Librarian TK2Q60D CAD Model

Description

The TK2Q60D is a medium-popularity electronic component manufactured by Toshiba Semiconductor and Storage.

  • GPTDescription: This MOSFET has a polarity of N-Channel and a power dissipation of 60W (Tc).
  • GPTDescription: Its supply and demand status is limited, but it is a viable option for electronic devices that require its specifications.
  • GPTDescription: It has a maximum gate-source voltage of ±30V and a maximum Rds On @ Id,Vgs of 4.3 Ohm @ 1A, 10V.

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Pricing & Ordering

Quantity Unit Price Ext. Price
445+ $0.1305 $58.0725
1,080+ $0.1074 $115.9920
1,670+ $0.1040 $173.6800
2,300+ $0.1005 $231.1500
2,980+ $0.0970 $289.0600
3,950+ $0.0878 $346.8100
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 42,000 pieces
MOQ: 445 pcs
Order Increment : 1 pcs
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Shipped from HK warehouse
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