The TK31J60W5 is a 600V, 31A N-channel power MOSFET from Toshiba Semiconductor and Storage. This MOSFET utilizes Toshiba's advanced π-MOS VII process, ensuring low on-resistance and superior switching performance, making it suitable for various power electronics applications. The device is available in a TO-247 package.

Applications

• Power factor correction (PFC) circuits
• Switch-mode power supplies (SMPS)
• Uninterruptible power supplies (UPS)
• Motor control circuits
• DC-DC converters
• Solar inverters

Features

• V<sub>DSS: 600V
• I<sub>D: 31A
• R<sub>DS(on) (Max): 0.099 Ω @ V<sub>GS = 10V
• Low gate charge
• High avalanche ruggedness
• Improved switching performance
• TO-247 package for excellent heat dissipation

Benefits

• High Efficiency: Low on-resistance minimizes power loss, contributing to high energy efficiency in power supplies and converters.
• Reliable Operation: High avalanche ruggedness ensures the MOSFET can withstand voltage spikes and transient conditions, providing robust performance and long operational life.
• Simplified Thermal Management: The TO-247 package facilitates efficient heat dissipation, allowing for higher power density and simplified thermal design.
• Fast Switching: Reduced gate charge enables rapid switching speeds, making it suitable for high-frequency applications and reducing switching losses.
• Compact Design: The device offers a balance between current handling capability and package size.

Technical Specifications

The TK31J60W5 features a drain-source voltage (V<sub>DSS) of 600V, a continuous drain current (I<sub>D) of 31A, and a pulsed drain current (I<sub>DP) of typically around 93A. The gate-source voltage (V<sub>GS) is rated at ±30V. The maximum power dissipation (P<sub>D) is approximately 28.4W (check datasheet for exact value depending on mounting conditions). The operating and storage temperature range is typically -55°C to 150°C. The R<sub>DS(on) value is 0.099Ω max at V<sub>GS = 10V.