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Same model may have multiple batches, images only for reference.
TK34A10N1 Real Image
Same model may have multiple batches, images only for reference.

TK34A10N1

Part No TK34A10N1
Manufacturer Toshiba Semiconductor and Storage
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 100V 34A TO-220
Datasheet
TK34A10N1 Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Toshiba Semiconductor and Storage
Packaging Tube/Rail
Status Active
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 100V
Continuous Drain Current at 25°C 34A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Gate-Source Threshold Voltage 4V @ 500μA
Max Gate Charge 38nC @ 10V
Max Input Capacitance 2600pF @ 50V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 35W (Tc)
Maximum Rds On at Id,Vgs 9.5 mOhm @ 17A, 10V
Temperature Range - Operating 150°C (TJ)
Mounting Through Hole
Case / Package TO-220SIS
Dimension TO-220-3 Full Pack, Isolated Tab
Win Source Part Number 212881-TK34A10N1
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian TK34A10N1 CAD Model

Description

The Toshiba Semiconductor and Storage TK34A10N1 is a medium popularity electronic component that is categorized as discrete-semiconductor-products.

  • Component: MOSFET transistor
  • Designed to: switch and amplify electronic signals
  • Maximum Power Dissipation: 35W
  • Operating Temperature Range: up to 150 degrees Celsius
  • Applications: power supplies, motor control, and lighting

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Pricing & Ordering

Quantity Unit Price Ext. Price
105+ $0.5717 $60.0285
250+ $0.4689 $117.2250
385+ $0.4551 $175.2135
525+ $0.4401 $231.0525
680+ $0.4250 $289.0000
910+ $0.3812 $346.8920
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 14,300 pieces
MOQ: 105 pcs
Order Increment : 1 pcs
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