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Same model may have multiple batches, images only for reference.
TK34E10N1,S1X Toshiba Semiconductor and Storage
Same model may have multiple batches, images only for reference.

TK34E10N1,S1X

Part No TK34E10N1,S1X
Manufacturer Toshiba Semiconductor and Storage
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 100V 75A TO-220
Datasheet
TK34E10N1,S1X Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Toshiba Semiconductor and Storage
Packaging Tube/Rail
Status Active
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 100V
Continuous Drain Current at 25°C 75A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Gate-Source Threshold Voltage 4V @ 500μA
Max Gate Charge 38nC @ 10V
Max Input Capacitance 2600pF @ 50V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 103W (Tc)
Maximum Rds On at Id,Vgs 9.5 mOhm @ 17A, 10V
Temperature Range - Operating 150°C (TJ)
Mounting Through Hole
Case / Package TO-220
Dimension TO-220-3
Win Source Part Number 1050476-TK34E10N1,S1X
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian TK34E10N1,S1X CAD Model

Description

The Toshiba Semiconductor and Storage TK34E10N1,S1X is an N-Channel MOSFET that is designed for use in various applications.

  • Power Dissipation (max): 103W (Tc)
  • Drain-Source Breakdown Voltage: 100V
  • Continuous Drain Current @ 25°C: 75A (Tc)
  • Gate-Source Threshold Voltage: 4V @ 500μA
  • Maximum Gate-Source Voltage: ±20V
  • Maximum Rds On @ Id,Vgs: 9.5 mOhm @ 17A, 10V
  • Maximum Gate Charge: 38nC @ 10V
  • Maximum Input Capacitance: 2600pF @ 50V
  • Package: TO-220
  • Temperature Range: 150°C (TJ)

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Pricing & Ordering

Quantity Unit Price Ext. Price
75+ $0.6964 $52.2300
175+ $0.5715 $100.0125
275+ $0.5536 $152.2400
375+ $0.5357 $200.8875
485+ $0.5179 $251.1815
650+ $0.4643 $301.7950
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Availability: 766 pieces
MOQ: 75 pcs
Order Increment : 1 pcs
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