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Same model may have multiple batches, images only for reference.
TK35S04K3L(T6L1,NQ Toshiba Semiconductor and Storage
Same model may have multiple batches, images only for reference.

TK35S04K3L(T6L1,NQ

Part No TK35S04K3L(T6L1,NQ
Manufacturer Toshiba Semiconductor and Storage
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 40V 35A DPAK-3
Datasheet
TK35S04K3L(T6L1,NQ Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Toshiba Semiconductor and Storage
Packaging Reel - TR
Status Active
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 40V
Continuous Drain Current at 25°C 35A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 6V, 10V
Gate-Source Threshold Voltage 3V @ 1mA
Max Gate Charge 28nC @ 10V
Max Input Capacitance 1370pF @ 10V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 58W (Tc)
Maximum Rds On at Id,Vgs 10.3 mOhm @ 17.5A, 10V
Temperature Range - Operating 175°C (TJ)
Mounting SMD (SMT)
Case / Package DPAK+
Dimension TO-252-3, DPak (2 Leads + Tab), SC-63
Win Source Part Number 1107436-TK35S04K3L(T6L1,NQ
Popularity Medium
Supply and Demand Status Limited
Ultra Librarian 3D Model Ultra Librarian TK35S04K3L(T6L1,NQ CAD Model

Description

The TK35S04K3L(T6L1,NQ) is an N-channel MOSFET from Toshiba Semiconductor and Storage.

  • Package: Reel
  • Mounting: SMD
  • Power Dissipation: 58W (Tc)
  • Application: Discrete Semiconductor Products
  • Drive Voltage: 6V and 10V
  • Drain-Source Breakdown Voltage: 40V
  • Continuous Drain Current: 35A (Ta) @ 25°C
  • Gate-Source Threshold Voltage: 3V @ 1mA
  • Maximum Gate Charge: 28nC @ 10V
  • Maximum Input Capacitance: 1370pF @ 10V
  • Maximum Gate-Source Voltage: ±20V
  • Maximum Rds On @ Id,Vgs: 10.3 mOhm @ 17.5A, 10V
  • Supply and Demand: Limited

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