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Same model may have multiple batches, images only for reference.
TK39N60W,S1VF(S Toshiba Semiconductor and Storage – Price, Stock & Datasheet
Same model may have multiple batches, images only for reference.

TK39N60W,S1VF(S

Part No TK39N60W,S1VF(S
Manufacturer Toshiba Semiconductor and Storage
Catalog Transistors - FETs, MOSFETs - RF
Description N-Channel 600V 38.8A 270W Through Hole TO-247-3
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Package TO-247-3
Drain to Source Voltage 600V
Output Capacitance(Coss) 90pF
Current - Continuous Drain(Id) 38.8A
Gate Threshold Voltage (Vgs(th)) 3.7V
Pd - Power Dissipation 270W
Reverse Transfer Capacitance (Crss@Vds) 10pF
RDS(on) 65mΩ@10V
Number 1 N-channel
Input Capacitance(Ciss) 4.1nF
Gate Charge(Qg) 110nC@10V
Type N-Channel
Ultra Librarian 3D Model Ultra Librarian TK39N60W,S1VF(S CAD Model

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