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Same model may have multiple batches, images only for reference.
TK3P80E,RQ Toshiba Semiconductor and Storage – Price, Stock & Datasheet
Same model may have multiple batches, images only for reference.

TK3P80E,RQ

Part No TK3P80E,RQ
Manufacturer Toshiba Semiconductor and Storage
Catalog FETs - Single
Description PB-F POWER MOSFET TRANSISTOR DPA
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Category Discrete Semiconductor ProductsTransistorsFETs, MOSFETsSingle FETs, MOSFETs
Mfr Toshiba Semiconductor and Storage
Part Status Active
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 800 V
Current - Continuous Drain (Id) @ 25°C 3A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Max) @ Id, Vgs 4.9Ohm @ 1.5A, 10V
Vgs(th) (Max) @ Id 4V @ 300μA
Gate Charge (Qg) (Max) @ Vgs 12 nC @ 10 V
Vgs (Max) ±30V
Input Capacitance (Ciss) (Max) @ Vds 500 pF @ 25 V
Power Dissipation (Max) 80W (Tc)
Operating Temperature 150°C
Mounting Type Surface Mount
Supplier Device Package DPAK
Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63
Ultra Librarian 3D Model Ultra Librarian TK3P80E,RQ CAD Model

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