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Same model may have multiple batches, images only for reference.
TK40S10K3Z(T6L1,NQ Toshiba Semiconductor and Storage
Same model may have multiple batches, images only for reference.

TK40S10K3Z(T6L1,NQ

Part No TK40S10K3Z(T6L1,NQ
Manufacturer Toshiba Semiconductor and Storage
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 100V 40A DPAK-3
Datasheet
TK40S10K3Z(T6L1,NQ Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Toshiba Semiconductor and Storage
Packaging Reel - TR
Status Active
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 100V
Continuous Drain Current at 25°C 40A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 10V
Gate-Source Threshold Voltage 4V @ 1mA
Max Gate Charge 61nC @ 10V
Max Input Capacitance 3110pF @ 10V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 93W (Tc)
Maximum Rds On at Id,Vgs 18 mOhm @ 20A, 10V
Temperature Range - Operating 175°C (TJ)
Mounting SMD (SMT)
Case / Package DPAK+
Dimension TO-252-3, DPak (2 Leads + Tab), SC-63
Win Source Part Number 1107440-TK40S10K3Z(T6L1,NQ
Popularity Medium
Supply and Demand Status Sufficient
Ultra Librarian 3D Model Ultra Librarian TK40S10K3Z(T6L1,NQ CAD Model

Description

The Toshiba Semiconductor and Storage TK40S10K3Z(T6L1,NQ) is an N-channel MOSFET with a maximum power dissipation of 93W (Tc) and a temperature range of 175°C (TJ).

  • Maximum Power Dissipation: 93W (Tc)
  • Temperature Range: 175°C (TJ)
  • Drain-Source Breakdown Voltage: 100V
  • Continuous Drain Current: 40A (Ta) @ 25°C
  • Gate-Source Threshold Voltage: 4V @ 1mA
  • Package: DPAK+
  • Dimension: TO-252-3, DPak (2 Leads + Tab), SC-63

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Pricing & Ordering

Quantity Unit Price Ext. Price
9+ $5.5714 $50.1426
22+ $4.5715 $100.5730
34+ $4.4286 $150.5724
47+ $4.2857 $201.4279
61+ $4.1429 $252.7169
81+ $3.7143 $300.8583
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Availability: 2,186 pieces
MOQ: 9 pcs
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