The TK49N65W is a 650V, N-channel power MOSFET from Toshiba Semiconductor. This device is designed for high-efficiency power supply applications where low on-resistance and fast switching speeds are critical. It utilizes Toshiba's DTMOSIV (Deep Trench MOSFET) technology to achieve a superior trade-off between on-resistance and gate charge.

Applications:

• Power Supplies (SMPS, AC-DC converters)
• Power Factor Correction (PFC) circuits
• DC-DC converters
• Lighting (LED drivers, HID ballasts)
• Motor control circuits

Features:

• High voltage rating: 650V
• Low on-resistance: Rds(on) = 0.079 Ω (typical) @ VGS = 10V
• Low gate charge: Qg = 23 nC (typical)
• Fast reverse recovery time
• Avalanche rated
• Improved dv/dt capability

Benefits:

• High efficiency due to low on-resistance and low gate charge, minimizing conduction and switching losses.
• Reduced heat generation and improved thermal performance.
• High reliability and robustness due to avalanche rating and improved dv/dt capability.
• Simplified design due to fast switching speed.
• Suitable for high-frequency applications.

Additional Details:

The TK49N65W uses Toshiba's DTMOSIV technology which contributes to lower on-resistance and reduced gate charge compared to conventional MOSFETs. The device is available in a TO-247 package. This device meets RoHS requirements. Its high voltage rating, low on-resistance, and fast switching characteristics make it an excellent choice for power supply designs requiring high efficiency and reliability.

Specifications:

• Vds (Drain-Source Voltage): 650V
• Ids (Continuous Drain Current): 49A
• Rds(on) (On-State Resistance): 0.079 Ohms
• Qg (Total Gate Charge): 23 nC
• Package Type: TO-247