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TK49N65W5,S1F

Part No TK49N65W5,S1F
Manufacturer Toshiba Semiconductor and Storage
Catalog Transistors - FETs, MOSFETs - RF
Description X35 PB-F POWER MOSFET TRANSISTOR
Sample
Rohs State rohs
ECAD Module
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Category Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single FETs, MOSFETs
Mfr Toshiba Semiconductor and Storage
Package Tube
Product Status Active
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 650 V
Current - Continuous Drain (Id) @ 25°C 49.2A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Max) @ Id, Vgs 57mOhm @ 24.6A, 10V
Vgs(th) (Max) @ Id 4.5V @ 2.5mA
Gate Charge (Qg) (Max) @ Vgs 185 nC @ 10 V
Vgs (Max) ±30V
Input Capacitance (Ciss) (Max) @ Vds 6500 pF @ 300 V
Power Dissipation (Max) 400W (Tc)
Temperature Range - Operating 150°C
Mounting Type Through Hole
Supplier Device Package TO-247
Package / Case TO-247-3
Base Product Number TK49N65
Standard Package 30 pcs
MSL Level 1 (Unlimited)
ECCN EAR99
HTSUS 8541.29.0095
Win Source Part Number 899698-TK49N65W5,S1F
Ultra Librarian 3D Model Ultra Librarian TK49N65W5,S1F CAD Model

Description

The TK49N65W5,S1F is an N-channel MOSFET transistor from Toshiba Semiconductor and Storage.

  • Drain to Source Voltage: 650V
  • Continuous Drain Current: 49.2A @ 25°C
  • Maximum On-Resistance: 57mOhm @ 24.6A and 10V
  • Gate Threshold Voltage: 4.5V @ 2.5mA
  • Power Dissipation: 400W
  • Mounting: Through-hole mountable
  • Package: TO-247-3 package
  • Gate Charge: 185nC @ 10V
  • Input Capacitance: 6500pF @ 300V
  • Operating Temperature Range: 150°C
  • Status: Active product
  • Suitable for: Various applications that require N-channel MOSFET transistors

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Pricing & Ordering

Quantity Unit Price Ext. Price
3+ $16.6910 $50.0730
8+ $13.6952 $109.5616
12+ $13.2672 $159.2064
16+ $12.8393 $205.4288
21+ $12.4113 $260.6373
27+ $11.1274 $300.4398
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 23,700 pieces
MOQ: 3 pcs
Order Increment : 1 pcs
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